Year Milestones
1997 HHNEC was established.
1999 HHNEC successfully pilot-ran the DRAM production line.
2000 Grace Cayman established Grace Shanghai.
2003 HHNEC commenced its foundry services.
Grace Shanghai commenced production of 0.20μm PC chipsets.
Grace Shanghai commenced production of 0.25/0.18μm standalone
NOR Flash.
2004 Grace Shanghai commenced production of 0.25μm eFlash for automotive engine control units.
2005 Hua Hong Semiconductor was incorporated in Hong Kong as the holding company of HHNEC.
HHNEC commenced production of embedded EEPROM for China’s national ID card.
2006 HHNEC licensed the 0.13μm SONOS technology from Cypress for the production of eFlash.
Grace Shanghai licensed the SuperFlash technology from Silicon Storage Technology, Inc. (SST) for the production of eFlash.
2007 HHNEC commenced production of 0.35μm BCD semiconductors.
Grace Shanghai commenced production of 0.18μm eFlash.
2008 HHNEC commenced production of 0.13μm SONOS eFlash.
2009 Grace Shanghai commenced production of the 0.13μm Logic and MCU, and 0.12μm NOR Flash.
2010 HHNEC commenced production of 0.18μm BCD semiconductors.
Grace Shanghai commenced production of 0.13μm eFlash based on Superflash technology.
2011 Accumulated shipments by HHNEC of power MOSFET exceeded two million wafers.
Accumulated shipments by Grace Shanghai and HHNEC of SuperFlash-based ICs exceeded one million wafers.
HHNEC commenced production of 600V SJNFET and 1200V NPT IGBT.
The Merger between Hua Hong Semiconductor and Grace Cayman was completed.
2012 Annual shipments by Grace Shanghai and HHNEC of 0.13μm ICs for SIM cards reached approximately 1.8 billion units.
2013 The intra-group restructuring pursuant to the Merger was substantially completed.
HHGrace delivered magnetic sensor samples for mobile applications.
2014 Hua Hong Semiconductor was listed on the Main Board of The Stock Exchange of Hong Kong Limited on 15 October 2014.
Annual shipments by the Company of SIM card chips reached 2.66 billion units, 50% worldwide market share.
2015 The Company expanded the total capacity of the three fabs to 146,000 wafers per month; Fab 2, dedicated to power devices, reported an output of 50,000 wafers in a single month, a new record.
The Company commenced production of 0.11μm ULL eFlash.
The Company commenced production of 0.2μm RF SOI.
2016 The Company's 90nm eFlash process platform successfully achieved mass production.
The financial IC cards produced on Company’s  eNVM process platform acquired the prestigious CC EAL5+ and EMVCo security certificates as well as MasterCard CQM certification.
2017 Accumulated shipments by the Company of DT-SJ process platform crossed 250,000 wafers.
Accumulated shipments by the Company of power discrete platform exceeded 5-million wafers.
The first MCU production based on 95nm OTP process platform.
Shipment of financial IC card chips to over 430 million.
2018 Hua Hong Semiconductor (Wuxi) started construction.
Annual wafer shipments surged to over 2 million for the first time.