Year Milestones
1996 Shanghai Huahong Microelectronics Co., Ltd. (now Huahong Group) was established.
1997 HHNEC was established.
1999 HHNEC successfully pilot-ran the DRAM production line.
2000 Grace Cayman established Grace Shanghai.
2002 HHNEC commenced production of Power MOSFET.
2003 HHNEC commenced its foundry services.
Grace Shanghai commenced production of 0.20μm PC chipsets.
Grace Shanghai commenced production of 0.25/0.18μm standalone NOR Flash.
2004 Grace Shanghai commenced production of 0.25μm eFlash for automotive engine control units.
2005 Hua Hong Semiconductor was incorporated in Hong Kong as the holding company of HHNEC.
HHNEC commenced production of embedded EEPROM for China’s national ID card.
2006 HHNEC licensed the 0.13μm SONOS technology from Cypress for the production of eFlash.
Grace Shanghai licensed the SuperFlash technology from Silicon Storage Technology, Inc. (SST) for the production of eFlash.
2007 HHNEC commenced production of 0.35μm BCD semiconductors.
Grace Shanghai commenced production of 0.18μm eFlash.
2008 HHNEC commenced production of 0.13μm SONOS eFlash.
2009 Grace Shanghai commenced production of the 0.13μm Logic and MCU, and 0.12μm NOR Flash.
2010 HHNEC commenced production of 0.18μm BCD semiconductors.
Grace Shanghai commenced production of 0.13μm eFlash based on Superflash technology.
2011 Accumulated shipments by HHNEC of power MOSFET exceeded two million wafers.
Accumulated shipments by Grace Shanghai and HHNEC of SuperFlash-based ICs exceeded one million wafers.
HHNEC commenced production of 600V SJNFET and 1200V NPT IGBT.
The Merger between Hua Hong Semiconductor and Grace Cayman was completed.
2012 Annual shipments by Grace Shanghai and HHNEC of 0.13μm ICs for SIM cards reached approximately 1.8 billion units.
2013 The intra-group restructuring pursuant to the Merger was completed, and HHGrace commenced operation.
HHGrace delivered magnetic sensor samples for mobile applications.
HHGrace commenced production of 700V BCD.
HHGrace commenced production of 600V-1200V Field Stop IGBT.
2014 Hua Hong Semiconductor was listed on the Main Board of The Stock Exchange of Hong Kong Limited on 15 October 2014.
Annual shipments by the Company of SIM card chips reached 2.66 billion units, 50% worldwide market share.
2015 The Company expanded the total capacity to 146,000 wafers per month; HH Fab2, dedicated to power devices, reported an output of 50,000 wafers in a single month, a new record.
The Company commenced production of 0.11μm ULL eFlash.
The Company commenced production of 0.2μm RF SOI.
2016 The Company commenced production of 90nm eFlash.
The financial IC cards produced on Company’s  eNVM process platform acquired the prestigious CC EAL5+ and EMVCo security certificates as well as MasterCard CQM certification.
2017 Accumulated shipments by the Company of power discrete platform exceeded 5-million wafers.
The Company commenced production of 95nm single voltage 5V memory.
Shipment of financial IC card chips to over 430 million.
2018 The Phase I of the 300mm wafer fabrication facility of Hua Hong Wuxi started construction.
Annual wafer shipments of HHGrace surged to over 2 million for the first time.
2019 The Phase I of the 300mm wafer fabrication facility of Hua Hong Wuxi put into production.
Hua Hong Wuxi won LEED v4 Gold Award.
Hua Hong Wuxi delivered the first batch of 90nm embedded flash products.
2020 Hua Hong Wuxi delivered the first batch of power discrete products.
The product tapeout of the Company’s high-performance 90nm BCD process platform at the 300mm wafer production line of Hua Hong Wuxi.